Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /

Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /

محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Yong, Yoong Hooi
التنسيق:	أطروحة كتاب
اللغة:	English
منشور في:	2006.
الموضوعات:	Metal oxide semiconductors, Complementary. Gate array circuits. Silicon oxide films > Testing. Dielectrics > Testing.
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!

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