Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /

Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /

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書目詳細資料
主要作者:	Yong, Yoong Hooi
格式:	Thesis 圖書
語言:	English
出版:	2006.
主題:	Metal oxide semiconductors, Complementary. Gate array circuits. Silicon oxide films > Testing. Dielectrics > Testing.
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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