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  1. 1
    Gate oxide integrity (GOI) for C13 (0.13 [micro]m) silicon processing technology /
    by Yong, Yoong Hooi
    Published 2006
    Subjects: “...Metal oxide semiconductors, Complementary....”
    Thesis Book
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  2. 2
    Defectivity improvement in advanced processes and its investigation to negative bias temperature instabilities in High-K/Metal-Gate Deep-Submicron CMOS /
    by Yasmin Abdul Wahab
    Published 2015
    Subjects: “...Metal oxide semiconductors, Complementary Testing...”
    Thesis Book
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