Optimization of P-I-N rectifier diode for yield and robustness improvement using DOE
The Power Rectifier (P-i-N rectifier) is one of the widely used diode in high power semiconductor devices as circuit protection. This popularity comes from excellent reverse voltage blocking and fast switching time. As a result, the exploration on the power rectifiers to make the device more robust...
Saved in:
| 格式: | Thesis |
|---|---|
| 語言: | English |
| 主題: | |
| 在線閱讀: | http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/1/Page%201-24.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/2/Full%20text.pdf http://dspace.unimap.edu.my:80/xmlui/bitstream/123456789/78205/4/Cheah%20Chai%20Mee.pdf |
| 標簽: |
添加標簽
沒有標簽, 成為第一個標記此記錄!
|