Polycrystalline Gan Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
This thesis describes work on depositing polycrystalline gallium nitride (GaN) on m-plane sapphire substrate using cost effective physical deposition technique; electron beam (e-beam) evaporator and radio frequency (RF) sputtering, followed by annealing treatment in ammonia (NH3) ambient. The work w...
Saved in:
Main Author: | Kamarulzaman, Azharul Ariff |
---|---|
Format: | Thesis |
Language: | English |
Published: |
2017
|
Subjects: | |
Online Access: | http://eprints.usm.my/47791/1/POLYCRYSTALLINE%20GaN%20LAYER%20ON%20M-PLANE.pdf%20cut.pdf |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Similar Items
-
Polycrystalline GaN Layer On M-Plane Sapphire Substrate For Metal-Semiconductor-Metal Photodetector
by: Kamarulzaman, Azharul Ariff
Published: (2017) -
Investigation of intermediate layer for Ag/Si metal-semiconductor contacts
by: Bahri, Bibi Zulaika
Published: (2019) -
Studies on the growth and characterization of rare-earth Gd-Doped InGan/Gan magnetic semiconductor heterostructures
by: Mohd Tawil, Siti Nooraya
Published: (2011) -
Synthesis And Characterization Of Undoped And Mg-Doped Zno Nanorods By Hydrothermal Method For Photodetector And Led Applications
by: Azzez, Shrook Adnan
Published: (2017) -
Pengkelasan Dan Pencirian Sampel Tanah Menggunakan Gelombang Mikro [QC661. F172 2007 f rb].
by: Aziz, Mohd Fairuz Affandi
Published: (2007)