Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering

In this study, silicon thin films had been successfully produced by using Very High Frequency-Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) technique. The phase transition from amorphous to crystalline silicon along with crystallite types remains unknown, especially at VHF region up to 200...

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主要作者:	Rosman, Nor Hariz Kadir
格式:	Thesis
语言:	English
出版:	2020
主题:	Q Science (General)
在线阅读:	http://eprints.utm.my/id/eprint/101483/1/NorHarizKadirRosmanMFS2020.pdf
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spelling	my-utm-ep.1014832023-06-21T10:12:25Z Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering 2020 Rosman, Nor Hariz Kadir Q Science (General) In this study, silicon thin films had been successfully produced by using Very High Frequency-Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) technique. The phase transition from amorphous to crystalline silicon along with crystallite types remains unknown, especially at VHF region up to 200 MHz. In this work, very high frequencies ranging from 35 MHz until 200 MHz were investigated. The deposition time were fixed for 3 minutes and 15 minutes, while Radio Frequency (RF) power were fixed at 20 W and 30 W. For comparison purpose, RF-Magnetron Sputtering technique was used to deposit silicon thin films with the same RF power at 20 W and 30 W. Attenuated Total Reflectance-Fourier Transform Infrared (ATR-FTIR) spectroscopy and Raman spectroscopy were used to determine the phase transition of film structure from amorphous to crystal, while X-Ray Diffraction (XRD) technique was used to determine the crystallites in the samples for both deposition techniques. Morphology study was carried out using Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). The transition from hydrogenated amorphous silicon (a-Si:H) to hydrogenated crystalline silicon (c-Si:H) in the thin film samples was observed as deposition frequency increased from 35 MHz to 200 MHz. Typical Si (111) and Si (311) crystalline were formed in VHF-PECVD samples while only Si (311) was formed in RF-Magnetron Sputtering. VHF-PECVD produced 248 nm and 250 nm film thicknesses compared to RF-Magnetron Sputtering at only 34 nm. Rougher films were produced by VHF-PECVD with maximum average surface roughness of 3.64 nm compared to RF-Magnetron sputtering at 0.38 nm. Therefore, it can be concluded that the transition of silicon film from amorphous to crystal occurred at high deposition frequency using VHF-PECVD technique, but were hardly seen for RF-Magnetron Sputtering samples as the deposited thin films were too thin. 2020 Thesis http://eprints.utm.my/id/eprint/101483/ http://eprints.utm.my/id/eprint/101483/1/NorHarizKadirRosmanMFS2020.pdf application/pdf en public http://dms.library.utm.my:8080/vital/access/manager/Repository/vital:146243 masters Universiti Teknologi Malaysia, Faculty of Science Faculty of Science
institution	Universiti Teknologi Malaysia
collection	UTM Institutional Repository
language	English
topic	Q Science (General)
spellingShingle	Q Science (General) Rosman, Nor Hariz Kadir Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
description	In this study, silicon thin films had been successfully produced by using Very High Frequency-Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) technique. The phase transition from amorphous to crystalline silicon along with crystallite types remains unknown, especially at VHF region up to 200 MHz. In this work, very high frequencies ranging from 35 MHz until 200 MHz were investigated. The deposition time were fixed for 3 minutes and 15 minutes, while Radio Frequency (RF) power were fixed at 20 W and 30 W. For comparison purpose, RF-Magnetron Sputtering technique was used to deposit silicon thin films with the same RF power at 20 W and 30 W. Attenuated Total Reflectance-Fourier Transform Infrared (ATR-FTIR) spectroscopy and Raman spectroscopy were used to determine the phase transition of film structure from amorphous to crystal, while X-Ray Diffraction (XRD) technique was used to determine the crystallites in the samples for both deposition techniques. Morphology study was carried out using Field Emission Scanning Electron Microscope (FESEM) and Atomic Force Microscope (AFM). The transition from hydrogenated amorphous silicon (a-Si:H) to hydrogenated crystalline silicon (c-Si:H) in the thin film samples was observed as deposition frequency increased from 35 MHz to 200 MHz. Typical Si (111) and Si (311) crystalline were formed in VHF-PECVD samples while only Si (311) was formed in RF-Magnetron Sputtering. VHF-PECVD produced 248 nm and 250 nm film thicknesses compared to RF-Magnetron Sputtering at only 34 nm. Rougher films were produced by VHF-PECVD with maximum average surface roughness of 3.64 nm compared to RF-Magnetron sputtering at 0.38 nm. Therefore, it can be concluded that the transition of silicon film from amorphous to crystal occurred at high deposition frequency using VHF-PECVD technique, but were hardly seen for RF-Magnetron Sputtering samples as the deposited thin films were too thin.
format	Thesis
qualification_level	Master's degree
author	Rosman, Nor Hariz Kadir
author_facet	Rosman, Nor Hariz Kadir
author_sort	Rosman, Nor Hariz Kadir
title	Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
title_short	Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
title_full	Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
title_fullStr	Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
title_full_unstemmed	Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
title_sort	phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering
granting_institution	Universiti Teknologi Malaysia, Faculty of Science
granting_department	Faculty of Science
publishDate	2020
url	http://eprints.utm.my/id/eprint/101483/1/NorHarizKadirRosmanMFS2020.pdf
_version_	1776100708677844992

Phase change analysis of crystalline silicon thin film grown by very high frequency - plasma enhanced chemical vapour deposition and radio frequency - magnetron sputtering

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