Optimization of vhf-pecvd deposition parameters for silicon carbide film using in-situ and in-line gas phase analysis
In this study, the feasibility of using very high frequency (100 MHz to 200 MHz) Plasma Enhanced Chemical Vapour Deposition (VHF-PECVD) technique to deposit crystalline silicon carbide (SiC) thin films was investigated. High quality crystalline SiC film is very challenging to be produced since high...
Saved in:
主要作者: | Azali, Muhamad Muizzudin |
---|---|
格式: | Thesis |
语言: | English |
出版: |
2022
|
主题: | |
在线阅读: | http://eprints.utm.my/102659/1/MuhamadMuizzudinAzaliMFS2022.pdf.pdf |
标签: |
添加标签
没有标签, 成为第一个标记此记录!
|
相似书籍
-
Comparison of the structural properties of silicon carbide using very high frequency plasma enhanced chemical vapour deposition with magnetron sputtering techniques
由: Azali, Muhamad Muizzudin
出版: (2022) -
Structural and optical properties of nanocrystalline silicon thin films grown by 150MHz VHF-PECVD
由: Tarjudin, Nurul Aini
出版: (2012) -
Development of very high frequency plasma enhanced chemical vapour deposition for nanostructure silicon carbide thin film deposition
由: Omar, Muhammad Firdaus
出版: (2016) -
UV-Vis characterization of diamond-like carbon thin films deposited using (DC-PECVD)
由: Ab. Rahman, Nur Alifah
出版: (2010) -
Structural properties of hydrogenated amorphous silicon (A-SI:H) thin film grown via radio frequency plasma enhanced chemical vapor deposition (RF PECVD)
由: Anthony Hasbi, Hasbullah
出版: (2005)